Figure 9.

One thousand consecutive dc switching cycles of IrOx/AlOx/W cross-point memory. The switching was obtained at a CC of 200 μA and a low operation voltage of ±2 V for the PF device with a size of 4 × 4 μm.

Prakash et al. Nanoscale Research Letters 2013 8:379   doi:10.1186/1556-276X-8-379
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