Figure 8.

RESET phenomena for the PF and NF devices. RESET currents of NF and PF devices containing (a) AlOx, (b) GdOx, (c) HfOx, and (d) TaOx switching materials with an IrOx/high-κx/W structure.

Prakash et al. Nanoscale Research Letters 2013 8:379   doi:10.1186/1556-276X-8-379
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