Figure 6.

Fitted I-V characteristics of PF and NF devices with IrOx/TaOx/W structure. (a) LRS of NF devices fitted ohmic behavior. (b) HRS for the NF devices were consistent with Schottky behavior. (c) Both LRS and HRS of the PF devices show a TC-SCLC transport mechanism.

Prakash et al. Nanoscale Research Letters 2013 8:379   doi:10.1186/1556-276X-8-379
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