Fitted I-V characteristics of PF and NF devices with IrOx/TaOx/W structure. (a) LRS of NF devices fitted ohmic behavior. (b) HRS for the NF devices were consistent with Schottky behavior. (c) Both LRS and HRS of the PF devices show a TC-SCLC transport mechanism.
Prakash et al. Nanoscale Research Letters 2013 8:379 doi:10.1186/1556-276X-8-379