Figure 5.

Current–voltage (I-V) switching characteristics of devices with via-hole structure under negative (NF) and positive formation (PF). (a, c, e, and g) Switching curves of NF devices containing AlOx, GdOx, HfOx, and TaOx switching materials, respectively, in an IrOx/high-κx/W structure. (b, d, f, and h) PF devices containing AlOx, GdOx, HfOx, and TaOx switching materials, respectively, in an IrOx/high-κx/W structure.

Prakash et al. Nanoscale Research Letters 2013 8:379   doi:10.1186/1556-276X-8-379
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