Figure 11.

Stability and data retention of a cross-point device. (a) Long read pulse endurance of >105 cycles and (b) data retention of >104 s are observed with CCs of 50, 100, and 200 μA. Good data retention is also observed at 85°C at a low CC of 50 μA. (c) Program/erase endurance of memory device.

Prakash et al. Nanoscale Research Letters 2013 8:379   doi:10.1186/1556-276X-8-379
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