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Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

Amit Prakash, Siddheswar Maikap*, Writam Banerjee, Debanjan Jana and Chao-Sung Lai

Nanoscale Research Letters 2013, 8:379  doi:10.1186/1556-276X-8-379

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