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Reduction in thermal conductivity of Bi thin films with high-density ordered nanoscopic pores

Gil-Sung Kim1, Mi-Ri Lee1, Seung-Yong Lee2, Jung-Hwan Hyung1, No-Won Park3, Eun Sun Lee4 and Sang-Kwon Lee3*

Author affiliations

1 Basic Research Laboratory (BRL), Department of Semiconductor Science and Technology, Chonbuk National University, Jeonju 561-756, Republic of Korea

2 Department of Physics, National University of Singapore, Singapore 117542, Republic of Singapore

3 Department of Physics, Chung-Ang University, Seoul 156-756, Republic of Korea

4 Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA

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Citation and License

Nanoscale Research Letters 2013, 8:371  doi:10.1186/1556-276X-8-371

Published: 30 August 2013


We prepared two-dimensional Bi thin films with high-density ordered nanoscopic pores by e-beam evaporation of Bi metal. For this structure, we used polystyrene beads ranging from 200 to 750 nm in diameter as an etch mask. The typical hole and neck sizes of the Bi thin films with approximately 50 nm in thickness on SiO2/Si substrates were in the range of 135 to 490 nm and 65 to 260 nm, respectively. By measuring the thermal characteristics through a 3ω technique, we found that the thermal conductivities of nanoporous Bi thin films are greatly suppressed compared with those of corresponding bulk materials. With a decrease in pore size to approximately 135 nm, the thermal conductivity decreased significantly to approximately 0.46 W/m·K at 300 K.

Bismuth (Bi); Nanoporous structures; 2D thin films; 3ω technique; Thermal conductivity