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InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition

Senlin Li1, Qingqing Chen1, Shichuang Sun1, Yulian Li1, Qiangzhong Zhu2, Juntao Li2, Xuehua Wang2, Junbo Han3, Junpei Zhang3, Changqing Chen1 and Yanyan Fang1*

Author Affiliations

1 Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

2 State Key Laboratory of Optical Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China

3 Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

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Nanoscale Research Letters 2013, 8:367  doi:10.1186/1556-276X-8-367

Published: 28 August 2013

Abstract

The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results demonstrate that the densities of InAs quantum dots can be tuned in a wide range from 105 to 1010 cm−2 by simply manipulating V/III ratio via metal-organic chemical vapor deposition. These results are mainly ascribed to the changes of coverage and In adatom migration length due to the increasing V/III ratio.

Keywords:
InAs quantum dots; V/III ratio; MOCVD