Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films
1 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
2 Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
Nanoscale Research Letters 2013, 8:366 doi:10.1186/1556-276X-8-366Published: 28 August 2013
The energy transfer mechanism between luminescent centers (LCs) and Er3+ in erbium-doped silicon-rich oxide (SROEr) films prepared by electron beam evaporation is investigated. Intense photoluminescence of the LCs (weak oxygen bonds, neutral oxygen vacancies, and Si=O states) within the active matrixes is obtained. Fast energy transfer from Si=O states to Er3+ takes advantage in the SROEr film and enhances the light emission from Er3+. The introduction of Si nanoclusters, which induces the Si=O states and facilitates the photon absorption of the Si=O states, is essential to obtain intense photoluminescence from both Si=O states and Er3+.