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Open Access Nano Express

Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films

Lu Jin12, Dongsheng Li12*, Luelue Xiang12, Feng Wang12, Deren Yang12 and Duanlin Que12

Author Affiliations

1 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China

2 Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China

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Nanoscale Research Letters 2013, 8:366  doi:10.1186/1556-276X-8-366

Published: 28 August 2013

Abstract

The energy transfer mechanism between luminescent centers (LCs) and Er3+ in erbium-doped silicon-rich oxide (SROEr) films prepared by electron beam evaporation is investigated. Intense photoluminescence of the LCs (weak oxygen bonds, neutral oxygen vacancies, and Si=O states) within the active matrixes is obtained. Fast energy transfer from Si=O states to Er3+ takes advantage in the SROEr film and enhances the light emission from Er3+. The introduction of Si nanoclusters, which induces the Si=O states and facilitates the photon absorption of the Si=O states, is essential to obtain intense photoluminescence from both Si=O states and Er3+.

Keywords:
Luminescence centers; Silicon nanoclusters; Erbium ion; Energy transfer; Silicon-rich oxide