Table 1

Physical parameters for lifetime estimation based on our simple calculation model and PC1D
Symbol Parameter Silicon nanowire Bulk silicon
d, W Length, thickness 10 μm 190 μm
Ε Dielectric constant 11.4 11.4
Eg Energy gap (eV) 1.12 1.12
χ Electron affinity (eV) 4.05 4.05
Dt Trap level 0 0
τe0, τh0 Carrier lifetime 0.05 to 1.5 μs 1 ms
μe Electron mobility (cm2/(Vs)) 1,104 1,104
μh Hole mobility (cm2/(Vs)) 424.6 424.6
NA Accepter concentration (cm−3) 1 × 1016 1 × 1016

Kato et al.

Kato et al. Nanoscale Research Letters 2013 8:361   doi:10.1186/1556-276X-8-361

Open Data