Table 1

Sample parameters
Sample 1 Sample 2 Sample 3 Sample 4
ρ (Ω) 583 520 443 367
n (1013 cm−2) 2.08 1.98 2.16 2.44
μ (cm2/V.S) 511 605 651 694
Bc (T) 9.2 4.2 6.0 5.7
vc 94 194 148 178
ρxx/ρxy at Bc 2.1 3.7 2.5 2.8
μBc 0.47 0.25 0.39 0.40

Samples 1 and 2 were from the same chip, processed at 1,850°C for 45 min; the former is close to the edge, and the later is near the center. Samples 3 and 4 were also from the same chip, processed at 1,950°C for 30 min; the former is close to the center, and the latter is near the edge. Lower resistivity near the edge is expected in the FTG process; near the center the graphene growth is suppressed because of the higher concentration of Si vapor.

Liu et al.

Liu et al. Nanoscale Research Letters 2013 8:360   doi:10.1186/1556-276X-8-360

Open Data