|Sample 1||Sample 2||Sample 3||Sample 4|
|n (1013 cm−2)||2.08||1.98||2.16||2.44|
|ρxx/ρxy at Bc||2.1||3.7||2.5||2.8|
Samples 1 and 2 were from the same chip, processed at 1,850°C for 45 min; the former is close to the edge, and the later is near the center. Samples 3 and 4 were also from the same chip, processed at 1,950°C for 30 min; the former is close to the center, and the latter is near the edge. Lower resistivity near the edge is expected in the FTG process; near the center the graphene growth is suppressed because of the higher concentration of Si vapor.
Liu et al.
Liu et al. Nanoscale Research Letters 2013 8:360 doi:10.1186/1556-276X-8-360