Abstract
We have performed magnetotransport measurements on multilayer epitaxial graphene. By increasing the driving current I through our graphene devices while keeping the bath temperature fixed, we are able to study Dirac fermion heating and current scaling in such devices. Using zerofield resistivity as a self thermometer, we are able to determine the effective Dirac fermion temperature (T_{DF}) at various driving currents. At zero field, it is found that T_{DF} ∝ I^{≈1/2}. Such results are consistent with electron heating in conventional twodimensional systems in the plateauplateau transition regime. With increasing magnetic field B, we observe an Iindependent point in the measured longitudinal resistivity ρ_{xx} which is equivalent to the direct insulatorquantum Hall (IQH) transition characterized by a temperatureindependent point in ρ_{xx}. Together with recent experimental evidence for direct IQH transition, our new data suggest that such a transition is a universal effect in graphene, albeit further studies are required to obtain a thorough understanding of such an effect.
Keywords:
Graphene; Magnetoresistivity measurements; Direct insulatorquantum Hall transitionBackground
Graphene, which is an ideal twodimensional (2D) system, has been attracting worldwide interest since its discovery in 2004 [1]. While the sizes of mechanically exfoliated graphene are limited, its ultrahigh quality allows one to observe fascinating physical phenomena such as ambipolar characteristics [1], anomalous integer quantum Hall steps [1], Berry's phase [2,3], and fractional quantum Hall effect [46]. On the other hand, graphene prepared by chemical vapor deposition (CVD) and epitaxial graphene can be used for potential device applications because the sizes of these systems should allow realization of waferscale integrated circuits based on graphene [7].
When a charge system is appreciably heated by a driving current, the equilibrium between the phonons and the charges collapses. In this situation, effective charge temperature (T_{c}) can be substantially higher than lattice temperature (T_{L}) [8]. This interesting physical phenomenon is normally called the charge heating effect. In some cases, there exists a simple effective charge temperaturecurrent relation T_{c} ∝ I^{α}, where α is an exponent that depends on chargephonon scattering [8]. It is now well established that the twobath model can be used to describe charge heating and charge energy loss rate by chargephonon scattering [8]. The charge heating effect has become increasingly important as device dimensions are reduced and charge mobility is increased [9]. In particular, Dirac fermion heating in graphene is an important physical phenomenon since it affects thermal dissipation and heat management in modern electronics [10] and lowtemperature applications such as quantum resistance metrology [11].
Insulatorquantum Hall (IQH) transition [1215] is an interesting physical phenomenon in the field of 2D physics. Especially, a direct transition from an insulator to a high Landau level filling factor ν ≥ 3 QH state which is normally described as the direct IQH transition continues to attract interest [1618]. Very recently, experimental evidence for direct IQH transition in epitaxial monolayer graphene [19] and in mechanically exfoliated multilayer graphene [20] has been reported. In order to further study direct IQH transition in the graphenebased system, one may wish to investigate Dirac fermion heating in graphene. Moreover, it is a fundamental issue to see if a currentindependent point in the longitudinal resistivity when the bath temperature is fixed exists since such a point should be equivalent to the direct IQH transition. Furthermore, one could probe current scaling on both sides of the direct IQH transition to further study Dirac fermionphonon scattering as well as Dirac fermionDirac fermion scattering, both of which are very fundamental physical phenomena.
In this paper, we report magnetotransport measurements on multilayer epitaxial graphene of few layers obtained under conditions which favor controlled growth at high temperatures [21]. Dirac fermion heating in the high current limit is studied. It is found that in the low magnetic field regime, the effective Dirac fermion temperature obeys a simple power law T_{DF} ∝ I^{≈0.5}. Such results suggest that the Dirac fermionphonon scattering rate 1/τ_{DFP} ~ T^{2}, consistent with those in conventional 2D electron systems. With increasing magnetic field, interestingly, a currentindependent point in the longitudinal resistivity is observed. It was demonstrated that such a point corresponds to the direct IQH transition characterized by a Tindependent point in ρ_{xx}. This result is further supported by the vastly different I dependences for both sides of the IQH transition. Our new experimental results, together with recent experimental results [19,20], indicate that direct IQH transition is a universal effect in graphene. We suggest that further experimental and theoretical studies are required to obtain a complete picture for direct IQH transition in graphenebased devices.
Methods
A controlled sublimation method was used for graphene growth on a 6HSiC (0001) surface [16]. First, the SiC substrate was cleaned using a standard procedure for substrate cleaning [21]. Second, the optically polished Siface surface was placed facetoface with a polished graphite disk (FTG) and arranged such that uniform Newton rings were observed in fluorescent light [21]. The optically finished substrate surfaces resulted in a higher rate of SiC decomposition compared to chemical–mechanical processed (CMP) surfaces and created multiple graphene layers.
The epitaxial growth process was controlled by annealing in a sequence of temperature ramp and dwell stages in Ar background gas at a pressure slightly higher than 1 atm using a commercial furnace. The substrates were first dehydrated and cleaned in the furnace at 725°C for approximately 16 h. The temperature was ramped to 1,200°C for 30 min and then ramped at 100°C/min for graphene growth at a temperature (dwell time) of 1,850°C (45 min; samples 1 and 2) or 1,950°C (30 min; samples 3 and 4). The temperatures were measured and controlled using molybdenumsheathed type ‘C’ thermocouples.
When the samples were taken out of the furnace, they were imaged by tappingmode atomic force microscopy (AFM). They were then shipped from NIST to National Taiwan University, where they were patterning into Hall bars by standard photolithography using reactive ion etch in O^{2} plasma (see Figure 1 with size ratio L/W = 4). The pleats on the surface show that multilayer graphene was grown over most of the 6HSiC (0001) surface [22]. Optically polished substrates produce much thicker graphene for the same processing conditions compared to that grown on CMP surfaces. The roughness of the optically polished surface provides much more offaxis surface area, relative to the (0001) atomic plane, and this accounts for the faster growth rate. The TEM images are taken from samples grown under the same conditions. Comparing the AFM images with TEM imaging performed on other samples, we would estimate that the 1,850°C samples have four to five layers of graphene and the 1,950°C samples have five to six layers. All fourterminal electrical measurements were carried out using dc constantcurrent sources and multimeters.
Figure 1. Optical microscopy image of Hall bar shows L = 100 and W = 25 μm. The green lines indicate the edges of the Hall bar.
Results and discussion
Figure 2 shows the magnetoresistivity measurements ρ_{xx} (B) at various temperatures. Negative magnetoresistivity centered at B = 0 can be ascribed to suppression of weak localization by a magnetic field applied perpendicular to the graphene plane. The weak localization effect in graphene is interesting as, initially, it was suggested that weak localization is strongly suppressed in exfoliated graphene flakes while normally pronounced positive magnetoresistivity centered at B = 0 is observed [23]. Later it was shown that the weak localization effect depends strongly on the chirality of the graphene system [24]. In epitaxial graphene, pronounced negative magnetoresistivity is often observed, allowing studies of weak localization in graphenebased systems [25]. As shown in Figure 2, the observed negative magnetoresistivity becomes less pronounced with increasing temperature.
Figure 2. The magnetoresistivity measurements ρ_{xx }(B) at different temperatures T. From top to bottom: T = 1.93, 1.98, 4, 6, 8, 10, 12, 15, 18, and 21 K.
Figure 3 shows the magnetoresistivity measurements ρ_{xx} (B) at various driving currents with the lattice temperature at ≈2 K. The negative magnetoresistivity observed centered at zero field shows a strong dependence on current and is suppressed at higher currents. We suggest that increasing the measurement temperature in the low current limit is equivalent to increasing the current while keeping the lattice temperature constant at approximately ≈2 K. These results can be ascribed to Dirac fermion heating in which the equilibrium between the phonons and Dirac fermion collapses. Using the zerofield resistivity of our device as a self thermometer, we are able to determine the effective Dirac fermion temperature at various driving currents. Such results are shown in Figure 4. In the low current limit, T_{DF} is approximately Iindependent, suggesting that the lattice temperature is equal to T_{DF}. In the high current limit, T_{DF} ∝ I^{≈0.52}. The measured exponent in the T_{DF}I relation is close to one half. Such a result is consistent with heating effects observed in various 2D systems in the plateauplateau transition regime [26,27]. Here we follow the seminal work of Scherer and coworkers [26]. The inelastic scattering length can be given by
where p is the exponent related to inelastic scattering. The effective electron temperature is given by the energy acquired by the electron diffusing along the distance l_{in} in the electric field E. Therefore,
Figure 3. Magnetoresistivity measurements ρ_{xx }(B) at driving currents I. The lattice temperature is constantly fixed at T ≈ 1.9 K. From top to bottom: I = 2, 3, 5, 7, 8.5, 10, 20, 30, 50, 70, 85, 100, 125, 150, 200, and 225 μA, respectively.
Figure 4. Effective Dirac fermion temperature T_{DF }versus driving current I on a loglog scale. The red line corresponds to the best fit in the highcurrent regime. The exponent in the T_{DF}I relation is given as α = 0.52 ± 0.01. The error stems from interpolation of the magnetoresistivity data.
Upon inserting Equation 2 and E ~ J ~ I, we have
If p = 2 [10,25], then the exponent in the temperaturescaling relation is 0.5 [21,2628] which is consistent with our experimental results obtained on Dirac fermions. We note that our experimental results are equivalent to a T^{4} dependence of energy loss rate for Dirac fermions as calculated [29] and observed in epitaxial, CVDgrown and exfoliated graphene [10,30]. It is worth pointing out that previous results are obtained in the plateauplateau transition regime [26,27,31] and Shubnikovde Haas region [10], which is in contrast with our case in the weak insulating regime where Landau quantization is not significant. Nevertheless, our data indeed indicate such a universal exponent at approximately 0.5 for heating in various 2D systems. Moreover, our results suggest that the Dirac fermionphonon scattering rate 1/τ_{DFP} is proportional to T^{2}. It is worth noting that enhanced mobility can be achieved in semiconductor quantum wires [32] and in semiconducting graphene nanoribbons [33] by a high dc electric field. Such interesting results are highly desirable for practical applications in narrow graphene devices in the high current limit.
In order to further study the observed Dirac fermion heating effects, we have extended our measurements to higher magnetic fields. Such results are shown in Figure 5. Interestingly, a currentindependent point in ρ_{xx} is observed. The observed fixed point is reminiscent of the IQH transition in graphene [19,20]. In order to confirm this interpretation, as shown in Figure 6, we perform magnetoresistivity measurements ρ_{xx} (B) at various temperatures in the low current limit to ensure thermal equilibrium between phonons and Dirac fermions. The same crossing point in ρ_{xx} at B_{c} ≈ 9.2 T is indeed observed. For B < B_{c}, the resistivity decreases with increasing temperature, as is characteristic of an insulator [17]. For B > B_{c}, the resistivity increases with increasing temperature, showing a QH conductor behavior [17]. In the high magnetic field regime, some weak oscillatory features can be ascribed to Shubnikovde Haas oscillations in disordered graphene. However, their amplitudes are weak; therefore, it is not possible to extract important physical quantities such as the quantum mobility and effective mass in our system. The Landau level filling factor at the crossing point is estimated to be ≈94. Therefore, we have observed compelling evidence for the direct IQH in disordered epitaxial graphene. Using the measured ρ_{xx} as a thermometer for Dirac fermions, we are able to determine T_{DF} and the exponent in the T_{DF}I relation at different magnetic fields as shown in Figure 7. Close to B_{c}, the temperature dependence of ρ_{xx} is so weak that reliable determination of T_{DF} cannot be obtained. We note that in the insulating regime B < B_{c}, the exponent is again close to one half, consistent with the results at B = 0. In the QHlike regime, the exponent is about 0.15 which is significantly smaller than one half. Such vastly different exponents observed in the two regimes provide further experimental evidence for the direct IQH transition in disordered epitaxial graphene. We note that defining physically an effective temperature for nonthermalequilibrium electrons is nontrivial [34], which is not always a scaling relation based on a linear response theory for perturbative thermalequilibrium states. Therefore, further studies are required for a better understanding of our results.
Figure 5. Magnetoresistivity measurements ρ_{xx }(B) at various driving currents I. The lattice temperature is constantly fixed at T ≈ 2 K.
Figure 6. The magnetoresistivity measurements ρ_{xx }(B) at different T for sample 1. The inset shows the Hall measurements ρ_{xy} (B) at different T for sample 1.
Figure 7. The determined exponent α in the power law T_{DF} ∝ I^{α}versus magnetic field B.
In studying multilayer epitaxial graphene, top gating is difficult since depositing a dielectric layer is difficult and the top layers would screen the electric fields. Back gating is impractical because it would require SiC substrate thinning. Therefore, in order to further study the observed direct IQH transition, we choose to study various samples with different classical mobilities (see Additional file 1). In all cases, an approximately Tindependent point in ρ_{xx} is observed. The approximated Tindependent Hall results suggest that Dirac fermionDirac fermion interactions are not significant in all our devices [3538]. The crossing point and some other physical quantities are listed in Table 1. We note that for the same numbers of layer, the crossing field B_{c} is lower when the mobility μ is higher, consistent with the results obtained in conventional GaAsbased 2D systems [39,40]. Moreover, the spin degree of freedom does not play an important role in the observed direct IQH transition [4145]. The dependence of the crossing magnetic field on the number of layers and sample does not seem to show a trend and thus requires further studies.
Additional file 1: Figure S1. The magnetoresistivity measurements ρ_{xx} (B) at different T for sample 2. The inset shows the Hall measurements ρ_{xy} (B) at different T for sample 2. Figure S2 The magnetoresistivity measurements ρ_{xx} (B) at different T for sample 3. The inset shows the Hall measurements ρ_{xy} (B) at different T for sample 3. Figure S3 The magnetoresistivity measurements ρ_{xx} (B) at different T for sample 4. The inset shows the Hall measurements ρ_{xy} (B) at different T for sample 4.
Format: DOCX Size: 2.6MB Download file
Table 1. Sample parameters
At the crossing fields, the corresponding Landau filling factors are much larger than 2. Therefore, we have observed direct IQH transition in all our devices [1720]. It was argued that for direct IQH transition in conventional semiconductorbased 2D systems, near the crossing field, ρ_{xx} is approximately ρ_{xy}, and the product of μB_{c} is close to 1 [46]. However, in all our devices, ρ_{xx}/ρ_{xy} is much greater than 1, and μB_{c} is always smaller than 1. Therefore, our data suggest that further studies are required to obtain a thorough understanding of the direct IQH transition not only in conventional 2D systems but also in disordered graphene. The observation of a currentindependent point in ρ_{xx} which corresponds to its temperatureindependent counterpart suggests that applying a high current is equivalent to heating up the graphene lattice.
Conclusions
In conclusion, we have presented magnetoresistivity measurements on multilayer epitaxial graphene. It is found that a relation between the effective Dirac fermion temperature and the driving current can be given by T_{DF} ∝ I^{≈0.5} in the low magnetic field regime. With increasing magnetic field, an Iindependent point in ρ_{xx} is observed which is equivalent to its Tindependent counterpart in the low current limit. Evidence for direct IQH transition has been reported in four different graphene samples. Near the crossing field where the longitudinal resistivity is approximately Tindependent, ρ_{xx} is at least two times larger than ρ_{xy}. Moreover, the product of Drude mobility and B_{c} is smaller than 1. We suggest that further studies are required to obtain a complete understanding of direct IQH transition in disordered graphene.
Competing interests
The authors declare that they have no competing interests.
Authors’ contributions
FHL, CSH, CC, TPW, and LIH performed the experiments. FHL, YF, YY, and REE fabricated the device. REE and CTL coordinated the project. TPW and STL provided key interpretation of the data. FHL and CTL drafted the paper. All the authors read and approved the final manuscript.
Acknowledgements
This work was funded by the National Science Council (NSC), Taiwan and National Taiwan University (grant number 102R75522).
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