RS properties of the Au/Co3O4/ITO memory cells. (a) Typical bipolar resistance switching I-V curves of the Au/Co3O4/ITO cells. (b) Electrical pulse-induced resistance switching of the Au/Co3O4/ITO memory cell at room temperature for 60 s, (inset, data retention of Au/Co3O4/ITO memory cell for >104 s), and (c) I-V curves on log scale.
Younis et al. Nanoscale Research Letters 2013 8:36 doi:10.1186/1556-276X-8-36