Nano Express
Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition
Author affiliations
School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, 2052, Australia
Citation and License
Nanoscale Research Letters 2013, 8:36 doi:10.1186/1556-276X-8-36
Published: 19 January 2013Abstract
Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect.
