Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition
School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, 2052, Australia
Nanoscale Research Letters 2013, 8:36 doi:10.1186/1556-276X-8-36Published: 19 January 2013
Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect.