Cross-sectional TEM images for the etched SiGe/Si MQW samples. The samples were etched for (a) 200 s, (b) 300 s and (c) 500 s, respectively. The right column of (b) also provides the high-magnification view for the upper and lower SiGe layers within a SiGe/Si MQW nanorod, respectively.
Chang et al. Nanoscale Research Letters 2013 8:349 doi:10.1186/1556-276X-8-349