Figure 3.

SEM images of the SiGe/Si MQW samples etched by RIE for different durations. (a) 100 s, (b) 200 s, (c) 300 s and (d) 500 s, respectively.

Chang et al. Nanoscale Research Letters 2013 8:349   doi:10.1186/1556-276X-8-349
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