Table 1

Comparison of P/E speed and data retention of the sol–gel-derived high-κ memory devices
This work (TixZrySizO with 600°C annealing) TixZrySizO NC with 900°C annealing[13] ZrxHfySizO NC with 900°C annealing[6] HfSixOywith 900°C annealing[21]
Program speed (2-V shift) 1.6 × 10−5 s 2.4 × 10−5 s 3 × 10−5 s 2 × 10−2 s
(Vg = −8 V, Vd = 8 V)
1.2 × 10−4 (Vg = −8 V, Vd = 8 V) (Vg = 10 V, Vd = 9 V) (Vg = Vd = 10 V)
(Vg = −6 V, Vd = 6 V)
Erase speed (2-V shift) 1.7 × 10−6 s 1.9 × 10−6 s 2 × 10−3 s 5 × 10−5 s
(Vg = Vd = 8 V)
5.2 × 10−6 s (Vg = Vd = 8 V) (Vg = −10 V, Vd = 9 V) (Vg = 10 V, Vd = 10 V)
(Vg = Vd = 6 V)
Retention at 85°C 5% loss 12% loss 11% loss 20% loss
(106 s) (106 s) (106 s) (only 104 s)
Retention at 125°C 10% loss 22% loss 30% loss NA
(106 s) (106 s) (106 s)

NC nanocrystal.

Chang et al.

Chang et al. Nanoscale Research Letters 2013 8:340   doi:10.1186/1556-276X-8-340

Open Data