Figure 9.

Reliability characteristics of the TixZrySiz O memory. (a) Retention characteristic of the memory at measurement temperatures of 85°C and 125°C. (b) Endurance characteristic of the memory up to 104 program/erase cycles.

Chang et al. Nanoscale Research Letters 2013 8:340   doi:10.1186/1556-276X-8-340
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