Figure 6.

Poole-Frenkel current of the TixZrySizO memory under negative gate bias. (a) Poole-Frenkel plot of the TixZrySiz O memory at different measuring temperatures. (b) Arrhenius plot of the memory at different values of electric field. (c) Graphical determination of the trap depth from the dependence of activation energy on the square root of electric field.

Chang et al. Nanoscale Research Letters 2013 8:340   doi:10.1186/1556-276X-8-340
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