SpringerOpen Newsletter

Receive periodic news and updates relating to SpringerOpen.

Open Access Nano Express

A hot hole-programmed and low-temperature-formed SONOS flash memory

Yuan-Ming Chang12, Wen-Luh Yang1, Sheng-Hsien Liu12, Yu-Ping Hsiao12, Jia-Yo Wu34 and Chi-Chang Wu5*

Author affiliations

1 Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan

2 Ph.D. Program in Electrical and Communications Engineering, Feng Chia University, Taichung 407, Taiwan

3 Department of Dentistry, Taipei Medical University Hospital, Taipei 110, Taiwan

4 School of Dentistry, College of Oral Medicine, Taipei Medical University, Taipei 110, Taiwan

5 Graduate Institute of Biomedical Materials and Tissue Engineering, College of Oral Medicine, Taipei Medical University, Taipei 110, Taiwan

For all author emails, please log on.

Citation and License

Nanoscale Research Letters 2013, 8:340  doi:10.1186/1556-276X-8-340

Published: 31 July 2013

Abstract

In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol–gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol–gel film.

Keywords:
Sol–gel; Hole trapping; Flash memory