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Ferroelectric BaTiO3/SrTiO3 multilayered thin films for room-temperature tunable microwave elements

Ming Liu12, Chunrui Ma2, Gregory Collins2, Jian Liu2, Chonglin Chen2*, Andy D Alemayehu3, Guru Subramanyam3, Ying Ding4, Jianghua Chen4, Chao Dai5, Yuan Lin5 and Melanie W Cole6

Author Affiliations

1 Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an, 710049 People’s Republic of China

2 Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249, USA

3 Department of Electrical and Computer Engineering, University of Dayton, Dayton, OH 45469, USA

4 Center of High Resolution Electron Microscopy, Hunan University, Changsa, Hunan 410082, People’s Republic of China

5 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, People’s Republic of China

6 Rodman Materials Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Aberdeen, MD 21005-5069, USA

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Nanoscale Research Letters 2013, 8:338  doi:10.1186/1556-276X-8-338

Published: 29 July 2013


Ferroelectric BaTiO3/SrTiO3 with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)SrTiO3//(001)BaTiO3//(001)MgO and [100]SrTiO3//[100]BaTiO3//[100]MgO. The microwave (5 to 18 GHz) dielectric measurements reveal that the multilayered thin films have excellent dielectric properties with large dielectric constant, low dielectric loss, and high dielectric tunability, which suggests that the as-grown ferroelectric multilayered thin films can be developed for room-temperature tunable microwave elements and related device applications.

BaTiO3//SrTiO3; Multilayer; Ferroelectric thin films; Epitaxial behavior; Microwave dielectric properties