Normalized electrical resistance per square measurements as function of temperature of tri- and four-layer graphene interconnects. The results show that when the temperature increases from 5 to 340 K, the resistance of the tri- and four-layer graphene interconnects drops significantly, indicating a semiconductor property of the graphene. The symbols are the measured data, and the lines are fits.
Liu et al. Nanoscale Research Letters 2013 8:335 doi:10.1186/1556-276X-8-335