Figure 4.

Dimensionless resistance, R(T)/R(5K), versus electric field E at different temperatures for (a) tri- and (b) four-layer graphene. The resistance of graphene interconnects drops substantially as the electric field is increasing; the corresponding resistance drop is larger for low temperatures. Inset is an optical micrograph of the tri- and four-layer graphene with four Cr/Au contact electrodes, respectively.

Liu et al. Nanoscale Research Letters 2013 8:335   doi:10.1186/1556-276X-8-335
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