Temperature dependence of the electrical transport properties in few-layer graphene interconnects
1 NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
2 School of Chemical and Biomolecular Engineering, The University of Sydney, New South Wales 2006, Australia
3 School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
4 Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
Citation and License
Nanoscale Research Letters 2013, 8:335 doi:10.1186/1556-276X-8-335Published: 25 July 2013
We report a systematic investigation of the temperature dependence of electrical resistance behaviours in tri- and four-layer graphene interconnects. Nonlinear current–voltage characteristics were observed at different temperatures, which are attributed to the heating effect. With the resistance curve derivative analysis method, our experimental results suggest that Coulomb interactions play an essential role in our devices. The room temperature measurements further indicate that the graphene layers exhibit the characteristics of semiconductors mainly due to the Coulomb scattering effects. By combining the Coulomb and short-range scattering theory, we derive an analytical model to explain the temperature dependence of the resistance, which agrees well with the experimental results.