Additional file 2: Figure S2.

FE-SEM image of InAs nanowires and schematic illustration of InSb nanowire. (a) FE-SEM (45° tilted view) of the InAs nanowires grown for 2 min on Si (111) substrates at 550°C. (b) Schematic illustration of InSb nanowire with indium droplet on Si (111) substrate.

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Li et al. Nanoscale Research Letters 2013 8:333   doi:10.1186/1556-276X-8-333