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InAs-mediated growth of vertical InSb nanowires on Si substrates

Tianfeng Li12, Lizhen Gao1, Wen Lei3, Lijun Guo1*, Huayong Pan4, Tao Yang2, Yonghai Chen2 and Zhanguo Wang2

Author affiliations

1 Department of Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China

2 Key Laboratory of Semiconductor Material Science, Institute of semiconductors, Chinese Academy of Science, Beijing 100083, People's Republic of China

3 School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy, Crawley 6009, Australia

4 Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China

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Citation and License

Nanoscale Research Letters 2013, 8:333  doi:10.1186/1556-276X-8-333

Published: 24 July 2013


In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications.

Catalyst-free; MOCVD; InSb; Nanowire; Electron microscopy