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Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory

Mu-Shih Yeh1, Yung-Chun Wu1*, Min-Feng Hung1, Kuan-Cheng Liu1, Yi-Ruei Jhan1, Lun-Chun Chen2 and Chun-Yen Chang2

Author affiliations

1 Department of Engineering and System Science, National Tsing Hua University, 101, Section 2 Kuang Fu Road, Hsinchu, 30013, Taiwan

2 Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu, 30013, Taiwan

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Citation and License

Nanoscale Research Letters 2013, 8:331  doi:10.1186/1556-276X-8-331

Published: 22 July 2013


This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Ω-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 104 program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.

Twin poly-Si; FinFET; TFT; Nonvolatile memory; Ω-gate; Nanowires; Three-dimensional; Flash memory