Figure 2.

The characteristics of the field-effect transistor based on an individual InSb nanowire. (a)Ids versus Vds characteristic curve under different gate voltage. The inset shows the SEM image of FET based on a single InSb nanowire. (b)Ids versus Vgs characteristic curve at Vds = 5 V. The carrier concentration of 3.6 × 1017 cm−3 and mobility of 215.25 cm2 V−1 s−1 are obtained.

Kuo et al. Nanoscale Research Letters 2013 8:327   doi:10.1186/1556-276X-8-327
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