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High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Cheng-Hsiang Kuo, Jyh-Ming Wu, Su-Jien Lin* and Wen-Chih Chang

Author affiliations

Department of Materials Science & Engineering, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Rd, Hsinchu 30013, Taiwan

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Citation and License

Nanoscale Research Letters 2013, 8:327  doi:10.1186/1556-276X-8-327

Published: 18 July 2013


Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm−3 and an electron mobility of 215.25 cm2 V−1 s−1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W−1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain.

Electrochemical method; InSb nanowires; Middle-infrared; Photodetectors; Metal–semiconductor-metal structure