Figure 2.

Schematic diagram, I-V characteristic curves of proposed devices and band diagrams of p-n junctions. (a) Schematic diagram of fabricated LED. (b) I-V characteristic curves of proposed devices based on ZnO nanorods with and without buffer layer of NiO. (c,d) Band diagrams of ZnO/GaN and ZnO/NiO/GaN p-n junctions, respectively.

Abbasi et al. Nanoscale Research Letters 2013 8:320   doi:10.1186/1556-276X-8-320
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