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Room-temperature violet luminescence and ultraviolet photodetection of Sb-doped ZnO/Al-doped ZnO homojunction array

Wei-Jen Chen1, Jen-Kai Wu1, Jheng-Cyuan Lin1, Shun-Tsung Lo2, Huang-De Lin1, Da-Ren Hang34*, Ming Feng Shih1, Chi-Te Liang15* and Yuan Huei Chang1*

Author affiliations

1 Department of Physics, National Taiwan University, Taipei 106, Taiwan

2 Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan

3 Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 804, Taiwan

4 Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 804, Taiwan

5 School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, South Korea

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Citation and License

Nanoscale Research Letters 2013, 8:313  doi:10.1186/1556-276X-8-313

Published: 5 July 2013

Abstract

A Sb-doped ZnO microrod array was fabricated on an Al-doped ZnO thin film by electrodeposition. Strong violet luminescence, originated from free electron-to-acceptor level transitions, was identified by temperature-dependent photoluminescence measurements. This acceptor-related transition was attributed to substitution of Sb dopants for Zn sites, instead of O sites, to form a complex with two Zn vacancies (VZn), the SbZn-2VZn complex. This SbZn-2VZn complex has a lower formation energy and acts as a shallow acceptor which can induce the observed strong violet luminescence. The photoresponsivity of our ZnO p-n homojunction device under a negative bias demonstrated a nearly 40-fold current gain, illustrating that our device is potentially an excellent candidate for photodetector applications in the ultraviolet wavelength region.

Keywords:
Violet luminescence; p-type ZnO; Photoluminescence