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Growth of single-crystalline cobalt silicide nanowires and their field emission property

Chi-Ming Lu1, Han-Fu Hsu1 and Kuo-Chang Lu12*

Author Affiliations

1 Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan

2 Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan

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Nanoscale Research Letters 2013, 8:308  doi:10.1186/1556-276X-8-308

Published: 3 July 2013


In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters.

CVD; Cobalt silicide; Nanowires; Single crystalline; Field emission