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Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts

Ryong Ha, Sung-Wook Kim and Heon-Jin Choi*

Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea

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Nanoscale Research Letters 2013, 8:299  doi:10.1186/1556-276X-8-299

Published: 26 June 2013

Additional files

Additional file 1: Figure S1:

Two XRD peaks of (0002) and (0004) in the XRD pattern indicate that GaN nanowires have wurtzite structure [16].

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Additional file 2: Figure S2:

An EDS was used to determine the composition in the InGaN shell.

Format: TIFF Size: 167KB Download file

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