Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea
Nanoscale Research Letters 2013, 8:299 doi:10.1186/1556-276X-8-299Published: 26 June 2013
Additional file 1: Figure S1:
Two XRD peaks of (0002) and (0004) in the XRD pattern indicate that GaN nanowires have wurtzite structure .
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Additional file 2: Figure S2:
An EDS was used to determine the composition in the InGaN shell.
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