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Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts

Ryong Ha, Sung-Wook Kim and Heon-Jin Choi*

Author Affiliations

Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea

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Nanoscale Research Letters 2013, 8:299  doi:10.1186/1556-276X-8-299

Published: 26 June 2013


We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor–liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and diameter of 1 to 10 μm and 100 nm, respectively. The vertical GaN/InGaN coaxial heterostructure nanowires (COHN) are then fabricated by the subsequent deposition of 2 nm of InxGa1-xN shell on the surface of GaN nanowires. The vertical GaN/InGaN longitudinal heterostructure nanowires (LOHN) are also fabricated by subsequent growth of an InGaN layer on the vertically aligned GaN nanowires using the catalyst. The photoluminescence from the COHN and LOHN indicates that the optical properties of GaN nanowires can be tuned by the formation of a coaxial or longitudinal InGaN layer. Our study demonstrates that the bi-metal catalysts are useful for growing vertical as well as heterostructure GaN nanowires. These vertically aligned GaN/InGaN heterostructure nanowires may be useful for the development of high-performance optoelectronic devices.

Coaxial heterostructure nanowires; Longitudinal heterostructure nanowires; Gallium nitride