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Improving Si solar cell performance using Mn:ZnSe quantum dot-doped PLMA thin film

Dan-Chen Cheng1, Hong-Chen Hao1, Miao Zhang12, Wei Shi1 and Ming Lu1*

Author affiliations

1 Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China

2 Materials Physics, Royal Institute of Technology KTH, Kista 164 40, Sweden

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Citation and License

Nanoscale Research Letters 2013, 8:291  doi:10.1186/1556-276X-8-291

Published: 20 June 2013

Abstract

Poly(lauryl methacrylate) (PLMA) thin film doped with Mn:ZnSe quantum dots (QDs) was spin-deposited on the front surface of Si solar cell for enhancing the solar cell efficiency via photoluminescence (PL) conversion. Significant solar cell efficiency enhancements (approximately 5% to 10%) under all-solar-spectrum (AM0) condition were observed after QD-doped PLMA coatings. Furthermore, the real contribution of the PL conversion was precisely assessed by investigating the photovoltaic responses of the QD-doped PLMA to monochromatic and AM0 light sources as functions of QD concentration, combined with reflectance and external quantum efficiency measurements. At a QD concentration of 1.6 mg/ml for example, among the efficiency enhancement of 5.96%, about 1.04% was due to the PL conversion, and the rest came from antireflection. Our work indicates that for the practical use of PL conversion in solar cell performance improvement, cautions are to be taken, as the achieved efficiency enhancement might not be wholly due to the PL conversion.

Keywords:
Si solar cell; Quantum dots; Photoluminescence conversion; Antireflectin; 78.55.-m; 84.60.Jt