Low-magnification (a) and high-resolution TEM images (b) of δ-Ni2Si NWs grown at 400°C, 9 Torr, and 30-sccm Ar flow. The image shows that there exists an oxide layer with 2 nm in thickness on the NW. The inset in (b) shows the corresponding FFT diffraction pattern with a  zone axis and  growth direction.
Chiu et al. Nanoscale Research Letters 2013 8:290 doi:10.1186/1556-276X-8-290