Figure 2.

δ-Ni2Si NWs grown at (a) 15 and (b) 30 min, and (c) corresponding XRD analysis of products. The temperature was fixed at 400°C, ambient pressure was 9 Torr, and the carrier gas flow rate was 30 sccm.

Chiu et al. Nanoscale Research Letters 2013 8:290   doi:10.1186/1556-276X-8-290
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