Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition
1 Department of Optics and Photonics/Thin Film Technology Center, National Central University, 300 Chung-Da Rd, Chung-Li, 32001, Taiwan
2 Graduate Institute of Energy Engineering/Thin Film Technology Center, National Central University, 300 Chung-Da Rd, Chung-Li, 32001, Taiwan
3 Optical Science Center/Thin Film Technology Center, National Central University, 300 Chung-Da Rd, Chung-Li, 32001, Taiwan
4 Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, AIST Central 5, 1-1-1 Higashi, Tsukuba, 305-8565, Japan
Citation and License
Nanoscale Research Letters 2013, 8:285 doi:10.1186/1556-276X-8-285Published: 12 June 2013
Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.