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Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition

Shih-Hao Chan1, Sheng-Hui Chen1, Wei-Ting Lin1, Meng-Chi Li3, Yung-Chang Lin4 and Chien-Cheng Kuo12*

Author affiliations

1 Department of Optics and Photonics/Thin Film Technology Center, National Central University, 300 Chung-Da Rd, Chung-Li, 32001, Taiwan

2 Graduate Institute of Energy Engineering/Thin Film Technology Center, National Central University, 300 Chung-Da Rd, Chung-Li, 32001, Taiwan

3 Optical Science Center/Thin Film Technology Center, National Central University, 300 Chung-Da Rd, Chung-Li, 32001, Taiwan

4 Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, AIST Central 5, 1-1-1 Higashi, Tsukuba, 305-8565, Japan

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Citation and License

Nanoscale Research Letters 2013, 8:285  doi:10.1186/1556-276X-8-285

Published: 12 June 2013

Abstract

Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.

Keywords:
Graphene; Chemical vapor deposition; Plasma; Low temperature