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Enhanced photoluminescence from porous silicon nanowire arrays

Chunqian Zhang, Chuanbo Li*, Zhi Liu, Jun Zheng, Chunlai Xue, Yuhua Zuo, Buwen Cheng and Qiming Wang

Author Affiliations

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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Nanoscale Research Letters 2013, 8:277  doi:10.1186/1556-276X-8-277

Published: 9 June 2013


The enhanced room-temperature photoluminescence of porous Si nanowire arrays and its mechanism are investigated. Over 4 orders of magnitude enhancement of light intensity is observed by tuning their nanostructures and surface modification. It is concluded that the localized states related to Si-O bonds and self-trapped excitations in the nanoporous structures are attributed to the strong light emission.

Si nanowire; Porous structure; PL; 78.55.-m; 78.67.Uh; 78.55.Mb