Femtosecond pulsed laser deposition of silicon thin films
Institute for Materials Research, Houldsworth Building, University of Leeds, Clarendon Road, Leeds, LS2 9JT, UK
Nanoscale Research Letters 2013, 8:272 doi:10.1186/1556-276X-8-272Published: 7 June 2013
Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for optical and optoelectronic applications.