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Femtosecond pulsed laser deposition of silicon thin films

Matthew Murray*, Gin Jose, Billy Richards and Animesh Jha

Author Affiliations

Institute for Materials Research, Houldsworth Building, University of Leeds, Clarendon Road, Leeds, LS2 9JT, UK

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Nanoscale Research Letters 2013, 8:272  doi:10.1186/1556-276X-8-272

Published: 7 June 2013


Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for optical and optoelectronic applications.

Femtosecond pulsed laser deposition; Silicon thin films; Chemical vapour deposition