Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate
1 Department of Physics, School of Physics and Electronics, Henan University, Kaifeng, 475004, People’s Republic of China
2 Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China
3 School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy, Crawley, 6009, Australia
Citation and License
Nanoscale Research Letters 2013, 8:27 doi:10.1186/1556-276X-8-27Published: 14 January 2013
We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules.