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Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

Tianfeng Li12, Lizhen Gao1, Wen Lei3, Lijun Guo1*, Tao Yang2, Yonghai Chen2 and Zhanguo Wang2

Author Affiliations

1 Department of Physics, School of Physics and Electronics, Henan University, Kaifeng, 475004, People’s Republic of China

2 Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China

3 School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy, Crawley, 6009, Australia

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Nanoscale Research Letters 2013, 8:27  doi:10.1186/1556-276X-8-27

Published: 14 January 2013


We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules.

Nanowires (NWs); Raman spectroscopy; Phonon property; Polarize; 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km