Thermal conductance and transmission coefficients of SiNW with defects. (top) Atomistic models of 〈100〉 SiNW with 2 nm in diameter with no defects (top-left), a surface defect (top-middle), and a center defect (top-right). The wire is oriented along the perpendicular direction to the sheet. (bottom-left) Temperature dependence of thermal conductance of SiNWs with no defects (black lines), a surface defect (blue lines), and a center defect (red lines), for various diameters of D=1.0 nm (solid lines), D=1.5 nm (dashed lines), and D=2.0 nm (dotted lines), respectively. (bottom-right) Transmission coefficients of the SiNWs with no defects (black lines), a surface defect (blue lines), and a center defect (red lines), respectively, for 1.0 nm in diameter.
Yamamoto et al. Nanoscale Research Letters 2013 8:256 doi:10.1186/1556-276X-8-256