Figure 1.

Schematic view of the atomistic model of SiNW for 〈100〉 direction with a diameter of 2 nm. The system is divided into three parts by black lines: left lead, scattering region, and right lead. Vacancy defects are introduced in the scattering region, while no defects are present in the left and right leads. Red circles represent the vacancy defects.

Yamamoto et al. Nanoscale Research Letters 2013 8:256   doi:10.1186/1556-276X-8-256
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