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p-Type hydrogen sensing with Al- and V-doped TiO2 nanostructures

Zhaohui Li1, Dongyan Ding1* and Congqin Ning2

Author Affiliations

1 Institute of Microelectronic Materials and Technology, State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China

2 State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China

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Nanoscale Research Letters 2013, 8:25  doi:10.1186/1556-276X-8-25

Published: 12 January 2013


Doping with other elements is one of the efficient ways to modify the physical and chemical properties of TiO2 nanomaterials. In the present work, anatase TiO2 nanofilms doped with Al and V elements were fabricated through anodic oxidation of Ti6Al4V alloy and further annealing treatment. Hydrogen sensing behavior of the crystallized Ti-Al-V-O nanofilms at various working temperatures was investigated through exposure to 1,000 ppm H2. Different from n-type hydrogen sensing characteristics of undoped TiO2 nanotubes, the Al- and V-doped nanofilms presented a p-type hydrogen sensing behavior by showing increased resistance upon exposure to the hydrogen-containing atmosphere. The Ti-Al-V-O nanofilm annealed at 450°C was mainly composed of anatase phase, which was sensitive to hydrogen-containing atmosphere only at elevated temperatures. Annealing of the Ti-Al-V-O nanofilm at 550°C could increase the content of anatase phase in the oxide nanofilm and thus resulted in a good sensitivity and resistance recovery at both room temperature and elevated temperatures. The TiO2 nanofilms doped with Al and V elements shows great potential for use as a robust semiconducting hydrogen sensor.

TiO2; Nanostructures; Doping; Hydrogen sensor; p- type