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Open Access Nano Express

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

Fang-I Lai12* and Jui-Fu Yang1

Author Affiliations

1 Department of Photonic Engineering, Yuan Ze University, 135 Yuan-Tung Rd, Jung-Li, Tao-Yuan country 32003, Taiwan

2 Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

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Nanoscale Research Letters 2013, 8:244  doi:10.1186/1556-276X-8-244

Published: 17 May 2013

Abstract

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

Keywords:
GaN; Light-emitting diodes (LEDs); Photonic quasi-crystal (PQC); Nano-imprint lithography (NIL)