Enhanced solar energy conversion in Au-doped, single-wall carbon nanotube-Si heterojunction cells
1 State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
2 College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China
3 Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu, People's Republic of China
Nanoscale Research Letters 2013, 8:225 doi:10.1186/1556-276X-8-225Published: 10 May 2013
The power conversion efficiency (PCE) of single-wall carbon nanotube (SCNT)/n-type crystalline silicon heterojunction photovoltaic devices is significantly improved by Au doping. It is found that the overall PCE was significantly increased to threefold. The efficiency enhancement of photovoltaic devices is mainly the improved electrical conductivity of SCNT by increasing the carrier concentration and the enhancing the absorbance of active layers by Au nanoparticles. The Au doping can lead to an increase of the open circuit voltage through adjusting the Fermi level of SCNT and then enhancing the built-in potential in the SCNT/n-Si junction. This fabrication is easy, cost-effective, and easily scaled up, which demonstrates that such Au-doped SCNT/Si cells possess promising potential in energy harvesting application.