Table 1

Temperatures and gas flows used for the growth of Zn3N2 on 1.8 nm Au/Si(001)
TG (°C) NH3 (sccm) H2 (sccm)
CVD1066 700 250 -
CVD1065 600 250 -
CVD1070 500 450 50
CVD1069 500 450 -
CVD1072 500 250 -
CVD1068 500 50 -

The temperature ramp was 10°C/min, and 0.9 g of Zn was used in all cases. Upon reaching TG = 500°C to 700°C, the same flow of NH3 and H2 was maintained for a further 60 min; after which, the reactor was allowed to cool down slowly for at least 30 min without changing the gas flows.

Zervos et al.

Zervos et al. Nanoscale Research Letters 2013 8:221   doi:10.1186/1556-276X-8-221

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