IrOx/GeOx/W MIM structure, typical I-V characteristics, and migration of oxygen ions. (a) Schematic diagram of the IrOx/GeOx/W MIM structure. (b) Typical I-V characteristics of as-deposited and PMA devices. (c to f) The migration of oxygen ions during application of a formation voltage, as shown in (b).
Prakash et al. Nanoscale Research Letters 2013 8:220 doi:10.1186/1556-276X-8-220